analog power AM3810N dual n-channel 20-v (d-s) mosfet v ds (v) i d (a) 6 5 symbol limit units v ds 20 v gs 10 t a =25c 6 t a =100c 3.6 i dm 20 i s 1 a t a =25c 0.83 t a =100c 0.3 t j , t stg -55 to 150 c symbol maximum units 110 150 notes a. surface mounted on 1 x 1 fr4 board. b. pulse width limited by maximum junction temperature power dissipation a p d w continuous drain current a operating junction and storage temperature range i d a pulsed drain current b continuous source current (diode conduction) a thermal resistance ratings parameter maximum junction-to-ambient a t <= 10 sec r ja c/w steady state absolute maximum ratings (t a = 25c unless otherwise noted) parameter drain-source voltage v gate-source voltage product summary r ds(on) (m) 20 24.5 @ v gs = 4.5v 38 @ v gs = 2.5v key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switching speed typical applications: ? battery powered instruments ? portable computing ? mobile phones ? gps units and media players tsop6 ? preliminary 1 publication order number: ds-AM3810N-2010-rev2 www.datasheet.co.kr datasheet pdf - http://www..net/
analog power AM3810N parameter symbol test conditions min typ max unit gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 ua 0.5 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 10 v 100 na v ds = 16 v, v gs = 0 v 1 v ds = 16 v, v gs = 0 v, t j = 85c 30 on-state drain current i d(on) v ds = 5 v, v gs = 10 v 10 a v gs = 4.5 v, i d = 6 a 24.5 v gs = 2.5 v, i d = 5 a 38 forward transconductance g fs v ds = 10 v, i d = 6 a 10 s diode forward voltage v sd i s = 1 a, v gs = 0 v 0.7 v total gate charge q g 12.5 gate-source charge q gs 0.7 gate-drain charge q gd 4.3 turn-on delay time t d(on) 5 rise time t r 14 turn-off delay time t d(off) 30 fall time t f 5 input capacitance c iss 700 output capacitance c oss 125 reverse transfer capacitance c rss 110 notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. v ds = 10 v, v gs = 0 v, f = 1 mhz dynamic zero gate voltage drain current nc v dd = 10 v, r l = 10 , i d = 1 a, v gen = 4.5 v, r gen = 6 analog power (apl) reserves the right to make changes without further notice to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. typical parameters which may be provided in apl data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including typicals must be validated for each customer application by customers technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the apl product could create a situation where personal injury or death may occur. should buyer purchase or use apl products for any such unintended or unauthorized application, buyer shall indemnify and hold apl and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that apl was negligent regarding the design or manufacture of the part. apl is an equal opportunity/affirmative action employer. static ua m r ds(on) i dss drain-source on-resistance electrical characteristics ns v ds = 10 v, v gs = 4.5 v, i d = 5.4 a pf ? preliminary 2 publication order number: ds-AM3810N-2010-rev2 www.datasheet.co.kr datasheet pdf - http://www..net/
analog power AM3810N 1. on-resistance vs. drain current 2. transfer characteristics 3. on-resistance vs. gate-to-source voltage 4. drain-to-source forward voltage 5. output characteristics 6. capacitance electrical characteristics 0 0.01 0.02 0.03 0.04 0.05 0.06 0 2 4 6 8 10 rds(on) - on - resistance ( ) id - drain current (a) 2.5v 4.5v 6v,8v,10v 1.8v 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 0.6 id - drain current (a) vds - drain - to - source voltage (v) 10v,8v,6v 4.5v 2.5v 1.8v 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0 2 4 6 8 10 rds(on) - on - resistance ( ) vgs - gate - to - source voltage (v) tj = 25 c i d = 6 a 0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 id - drain current (a) vgs - gate - to - source voltage (v) tj = 25 c 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 is - source current (a) vsd - source - to - drain voltage (v) tj = 25 c 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 capacitance (pf) vds - drain - to - source voltage (v) ciss coss crss f = 1mhz ? preliminary 3 publication order number: ds-AM3810N-2010-rev2 www.datasheet.co.kr datasheet pdf - http://www..net/
analog power AM3810N 7. gate charge typical electrical characteristics 8. normalized on-resistance vs junction temperature 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 vgs - gate - to - source voltage (v) qg - total gate charge (nc) i d = 5.4 a v ds = 10 v 0.5 1 1.5 2 - 50 - 25 0 25 50 75 100 125 150 rds(on) - on - resistance (normalized) tj - junction temperature ( c) ? preliminary 4 publication order number: ds-AM3810N-2010-rev2 www.datasheet.co.kr datasheet pdf - http://www..net/
analog power AM3810N e d a2 a1 a l e1 e b e1 c package information symbol --- 0.15 0.9 1.3 dimensions in millimeters min. max. --- 1.45 2.90 bsc 2.890 bsc 1.5 1.7 0.08 0.25 0.3 0.5 0.95bsc 1.90bsc 0.3 0.6 tsop6 ? preliminary 5 publication order number: ds-AM3810N-2010-rev2 www.datasheet.co.kr datasheet pdf - http://www..net/
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